Ultrafast carrier dynamics in InGaAs quantum dot materials and devices

Abstract

In this paper we review the subject of dephasing processes and population dynamics in self-assembled InGaAs/GaAs quantum dot materials and devices. Our aim is to give a comprehensive overview of our experimental results and an up-to-date discussion in comparison with present theories and other experiments reported in the literature. Additionally, we present new experimental results on InGaAs quantum dots emitting near 1.3 µm wavelength. Concerning the understanding of the fundamental physical processes, we will address the issues of carrier–phonon interaction and carrier–carrier Coulomb interaction and compare dephasing times with population dynamics to highlight the role of pure dephasing processes. Furthermore, we will point out the impact of the measured dynamics specifically at room temperature and under electrical injection in active waveguide structures, for the application of InGaAs/GaAs quantum dots in optoelectronic devices.