A Dual-Band 10/24-GHz Amplifier Design Incorporating Dual-Frequency Complex Load Matching

Abstract

This paper presents a comprehensive theory of a dual-frequency complex load-matching technique based on transmission lines. The theoretical analysis is insightfully described, and the applicable regions of the design equations are specified. To substantiate the theory, a corresponding methodology is proposed to design a dual-band 10/24-GHz amplifier, which is fabricated by standard 0.13- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\hbox {m}}$</tex></formula> 1P8M CMOS technology. This amplifier involves synthetic quasi-TEM transmission lines to build the dual-frequency matching circuits. The comparisons between simulations and on-wafer measurements are reported to establish the feasibility and flexibility of the presented technique in microwave applications.