Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

Abstract

A theory for class-J microwave amplifier operation as a function of drive level and fundamental load impedance is derived. Calculations show that, under appropriate operating conditions, it is sufficient to modulate the transistor load reactance to enable high-efficiency operation (>;70%) over a large output power dynamic range (>;10 dB) with high transistor power utilization. Such dynamic load modulation (DLM) networks are an ideal application of continuously tunable varactor technologies. Multiharmonic load-pull measurements are performed on a GaN HEMT and experimentally verify the theory of operation. A demonstrator amplifier using an SiC varactor technology is then designed and characterized by static measurements. The amplifier has a peak power of 38 dBm at 2.08 GHz and maintains efficiencies above 45% over 8 dB of power dynamic range. An analysis of the load network losses is performed to show the potential of the class-J DLM transmitter concept.