Gigahertz single-hole transfer in Si tunable-barrier pumps

Abstract

We report high-speed single-hole (SH) transfer using Si tunable-barrier pumps comprising p-type metal-oxide-semiconductor field-effect transistors. A clear SH-transfer-current plateau with the current level of about 160 pA was observed when a clock signal having a frequency of 1 GHz was applied to one of the gates. Temperature dependence measurements of the transfer current reveal that the transfer probability is dominated by non-equilibrium SH escape by thermal hopping from the electrically formed charge island. The lower bound of the relative error rate for the 1-GHz transfer is about 10−3 at a temperature of about 17 K. In addition, we investigate the frequency dependence of the transfer, where we discuss possible sources causing the change in the error rate. These results pave the way for accurate manipulation of SHs and its application to metrological current standards.