An 8.5–10.0 GHz 310 W GaN HEMT for radar applications

Abstract

A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of 2-dice of 14.4-mm gate periphery together with input and output 2-stage impedance transformers. The device exhibited saturated output power of 310 W with power gain of 10.0 dB over the wide frequency range of 8.5-10.0 GHz, operating at 65 V drain voltage under pulsed condition. In addition, the highest saturated output power reached 333 W with power gain of 10.2 dB at 9.0 GHz. This is the highest output power GaN HEMT ever reported for X-band.