Molecular beam epitaxy growth of GaAs/AlAs double-barrier resonant tunnelling devices on (311)A substrates

Abstract

The authors investigate resonant tunnelling in p-type silicon-doped GaAs/AlAs double-barrier quantum well structures grown by molecular beam epitaxy on the (311)A GaAs surface. Their current-voltage characteristics compare favourably with structures grown on the conventional (100) orientation using beryllium as the acceptor.