Distribution of bismuth atoms in epitaxial GaAsBi

Abstract

The distribution of Bi atoms in epitaxial GaAs(1−x)Bix is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.