Decapsulation and Photoresist Stripping in Oxygen Microwave Plasmas

Abstract

Oxygen microwave (mW) plasmas have been used to strip AZ 1350 J photoresist on glass substrates and to decapsulate hybrid resistor networks and Si IC packages. It has been found that the use of microwaves as the generating field provides an abundance of long‐lived atomic oxygen such that processing can be carried out in the afterflow of the discharge. In this downstream system, photoresist and organically based epoxy encapsulants were removed at rates of approximately 6.0 μm/min. In addition, optical emission spectroscopy, from the plasma and the chemiluminescence in the processing zone, has been used to characterize the system.