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Growth of [111]-Oriented Lead Zirconate Titanate Thin Film with Smooth Surface to Improve Electrical Properties
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1996
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Materials ScienceMaterials EngineeringLayer ThicknessLead-free PerovskitesEngineeringPerovskite Solar CellSurface CharacterizationLead Zirconate TitanateCrystal Growth TechnologySurface ScienceApplied PhysicsSmooth SurfaceRapid Thermal AnnealingHalide PerovskitesThin FilmsElectrical PropertiesPerovskite ModuleThin Film Processing
[111]-Oriented lead zirconate titanate (PZT) films with smooth surfaces were successfully grown on (111)-oriented polycrystalline Pt substrates after in-situ Ar-plasma cleaning by low-temperature reactive sputtering and rapid thermal annealing. The Pb composition was stoichiometrically controlled not only for total composition but also in the depth direction by low-temperature reactive sputtering. A (111)-oriented perovskite-phase PZT film with a very smooth surface was then obtained by rapid thermal annealing. The leakage current of quasi-epitaxial PZT films was markedly reduced to 10 -7 A/cm 2 and the equivalent SiO 2 layer thickness of around 0.4 nm was obtained for the fatigue-free PZT films thinner than 100 nm.