Ferroelectric domain stabilization in BaTiO3 by bulk ordering of defects

Abstract

From an analysis of the ac deconstriction of the hysteresis loop and microscopical observation of moving domain walls, it is concluded, that the ferroelectric domain stabilization in Mn-doped BaTiO3 crystals is due to bulk effects. Esr measurements have revealed that in reduced crystals Mn2+-V0 associates exist, having an excess orientation parallel to Ps-. It is hypothesized that the domain stabilization processes involve a gradual orientation of polar defect associates of this type.