Simultaneous measurement of spontaneous emission rate, nonlinear gain coefficient, and carrier lifetime in semiconductor lasers using a parasitic-free optical modulation technique

Abstract

An optical modulation technique is used to determine three important parameters for 1.3 μm InGaAsP diode lasers: the rate of spontaneous emission into the guided modes, the nonlinear gain coefficient, and the carrier lifetime at threshold. These results are unaffected by electrical parasitics, and are essential to understanding the noise and modulation properties of diode lasers.