Dielectric Relaxation in Layer‐Structured SrBi _{2− <i>x</i>} Nd _<i>x</i> Nb ₂ O ₉ Ceramics ( <i>x</i> =0, 0.05, 0.2, 0.35)

Abstract

SrBi 2− x Nd x Nb 2 O 9 ( x =0, 0.05, 0.2, 0.35) ceramics were synthesized by the traditional solid‐state sintering method. X‐ray diffraction analysis showed that single‐phase‐layered perovskites were obtained for all compositions. The substitution of Nd 3+ for Bi 3+ induced a relaxor behavior of frequency dispersion for Nd‐doped SrBi 2 Nb 2 O 9 .The parameter of frequency dispersion Δ T m , which is the T m between 1 kHz and 1 MHz, increases from 0°C for x =0 to 13°C for x =0.35, and the degree of relaxor behavior γ increases from 0.96 for x =0 to 2.02 for x =0.35. The temperature of the maximum dielectric constant T m decreases linearly with an increase in the Nd content ( x ).