Applied Physics Letters · 2007 · 196 citations · 16 references
Optical MaterialsEngineeringPhoto-electrochemical CellOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsPhotodetectorsNanoelectronicsMaterials ScienceElectrical EngineeringPhotoluminescenceHigh ResponsivityOptoelectronic MaterialsSchottky BarrierPhotoelectric MeasurementTi O 2Applied PhysicsThin FilmsDefect TrapsOptoelectronicsSolar Cell Materials
Nanocrystalline TiO2 thin films were prepared by sol-gel method and were then used to fabricate metal-semiconductor-metal ultraviolet photodetectors with Au Schottky contact. It was found that dark current of the fabricated devices was only 1.9nA at 5V applied bias. High responsivity of 199A∕W was achieved when it was irradiated by the ultraviolet light (λ=260nm). The low dark current and high responsivity maybe attributed to the effect of Schottky barrier in company with neutral semiconductor owing to the wide finger gap of 20μm. The devices show a slow time response with a rise time of 6s and a decay time of 15s. The authors deduced that the slow time response was caused by defect traps which were widely distributed in nanocrysal.
16
ZnO Schottky ultraviolet photodetectors
S. Liang, H. Sheng, Y. Liu et al. · Journal of Crystal Growth · 2001 · 904 citations
Electrical Engineering, Photoelectric Sensor, Engineering +5
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD
Y. Liu, C. R. Gorla, S. Liang et al. · Journal of Electronic Materials · 2000 · 368 citations
Gain mechanism in GaN Schottky ultraviolet detectors
Or Katz, V. Garber, B. Meyler et al. · Applied Physics Letters · 2001 · 303 citations
Wide-bandgap Semiconductor, Optical Materials, Engineering +16