Formation mechanism of interfacial voids in the growth of SiC films on Si substrates

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Kwang Chul Kim, Chan Il Park, Jae Il Roh, Kee Suk Nahm, Young Hun Seo; Formation mechanism of interfacial voids in the growth of SiC films on Si substrates. Journal of Vacuum Science & Technology A 1 September 2001; 19 (5): 2636–2641. https://doi.org/10.1116/1.1399321 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search