Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2001 · 40 citations · 26 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ScienceThin FilmsDefects In Electronic MaterialsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor Thin FilmsThin-film DepositionFilm Growth MechanismsFilm-substrate InteractionInterface FormationSurface Defect FormationThin-film Growth KineticsThin-film Growth MechanismsVoid GrowthVoids
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Kwang Chul Kim, Chan Il Park, Jae Il Roh, Kee Suk Nahm, Young Hun Seo; Formation mechanism of interfacial voids in the growth of SiC films on Si substrates. Journal of Vacuum Science & Technology A 1 September 2001; 19 (5): 2636–2641. https://doi.org/10.1116/1.1399321 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search
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Anisotropic etching of silicon
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