SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition

Abstract

Silicon–carbon–nitrogen alloys have been deposited by electron cyclotron resonance plasma chemical vapor deposition. Nitrogen, methane, and argon diluted silane have been used as precursor gases. The properties of the deposited films were studied by spectroscopic ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron, and Auger electron spectroscopy. The structure and bond formation in the SiCN films is discussed in terms of the present results.