Publication | Closed Access
Orientation Change of an Infinite-Layer Structure LaNiO<sub>2</sub> Epitaxial Thin Film by Annealing with CaH<sub>2</sub>
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Citations
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References
2010
Year
Materials ScienceEpitaxial GrowthMaterial AnalysisEngineeringFerroelectric ApplicationOxide ElectronicsLanio2 Thin FilmsX-ray DiffractionApplied PhysicsCondensed Matter PhysicsThin Film Process TechnologyOxygen RearrangementThin FilmsMolecular Beam EpitaxyOrientation ChangeFunctional MaterialsThin Film Processing
Low-temperature annealing with CaH2 reduced a perovskite LaNiO3 thin film to a c-axis oriented LaNiO2 thin film with an infinite-layer structure. X-ray diffraction and X-ray absorption spectroscopy measurements revealed that a further annealing caused oxygen rearrangement that changed the c-axis oriented LaNiO2 to an a-axis oriented LaNiO2 thin film consisting of a twin structure without changing the monovalent Ni oxidation state. The NiO2 infinite-layer planes in the a-axis oriented and c-axis oriented LaNiO2 thin films are perpendicular to each other.
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