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Resonant level lifetime in GaAs/AlGaAs double-barrier structures
71
Citations
9
References
1987
Year
Electrical EngineeringEngineeringRf SemiconductorPhysicsResonant Level LifetimeGaas/algaas Double-barrier StructureApplied PhysicsQuantum MaterialsCondensed Matter PhysicsWell DimensionsCategoryiii-v SemiconductorOptoelectronicsLowest Quasibound State
The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments.
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