Growth Mechanism of TiSi Nanopins on Ti₅Si₃ by Atmospheric Pressure Chemical Vapor Deposition

Abstract

High-density single crystalline orthorhombic TiSi nanopins were successfully synthesized on Ti5Si3 by atmospheric pressure chemical vapor deposition, using SiH4 and TiCl4 as the precursors. The growth mechanism was also investigated in detail. The results show that the maximum density of TiSi nanopins is obtained at the deposition temperature of 730 °C. TiSi nanopins grow along with [110] direction. The dimensions of quadrate tip of nanopins increase with deposition time, and the shape of the nanopin changes with the concentration of (SiH4 + TiCl4). A possible growth process is proposed which is well consistent with the experimental results.