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Avalanche Multiplication and Electron Mobility in Indium Antimonide at High Electric Fields†
40
Citations
3
References
1958
Year
Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringPhysicsElectronic EngineeringApplied PhysicsCondensed Matter PhysicsQuantum MaterialsAvalanche MultiplicationHigh Electric Fields†MicroelectronicsCategoryiii-v SemiconductorIndium AntimonideCurrent-voltage CharacteristicElectrical InsulationElectron Physic
ABSTRACT The current-voltage characteristic of indium antimonide has been measured up to a field of 800 volts/cm. Avalanche multiplication was found to occur at fields above 150 volts/cm. No variation of electron mobility was found up to the highest fields used.
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