Voltage induced magnetic anisotropy change in ultrathin Fe80Co20/MgO junctions with Brillouin light scattering

Abstract

We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/Fe80Co20/MgO/polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.