Effect of transferred-electron velocity modulation in high-efficiency GaAs IMPATT diodes

Abstract

Numerical calculations, supplemented by detailed physical interpretation, show that the high (greater than 30%) output efficiencies, experimentally obtained with GaAs non-punch-through IMPATT devices, are only possible due to the specific features (related to the transferred-electron effect) of the electron velocity versus electric field dependence in this material. Comparison is made with experimental results. Based on this new understanding, suggestions are made for further improvement of IMPATT performance.