Reactively Sputtered Silicon Oxynitride as a Dielectric Material for Metal-Insulator-Metal Capacitors

Abstract

Silicon oxynitride was formed by rf reactive sputtering of silicon in mixtures of . The dependence of dielectric constant, etch rate, breakdown strength, and IR transmittance on the concentration in the plasma was determined. Five to ten per cent gave an average breakdown strength of for metal‐insulator‐metal capacitors having molybdenum electrodes. The other capacitor parameters were also measured. An explanation of the high breakdown strengths in these capacitors is suggested.