Applied Physics Letters · 2006 · 52 citations · 24 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMagnetism In SolidsQuantum TunnelingSemiconductor InterfacesSemiconductor PhysicsSpintronic MaterialsSpintronicsFerromagnetic SemiconductorsMagnetoresistanceSpin InjectionSpin TransportSpin Transport In NanostructuresSpin-dependent TransportTunnel JunctionsTunneling Magnetoresistance
The authors investigated spin dependent transport through Fe∕GaAs∕Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe∕GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial Fe∕GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an Fe∕GaAs interface and is relevant for spin injection experiments.
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