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Optical properties of large-area ultrathin MoS2 films: Evolution from a single layer to multilayers
80
Citations
16
References
2014
Year
Thin Film PhysicsOptical MaterialsEngineeringTwo-dimensional MaterialsThin Film Process TechnologySemiconductor NanostructuresSemiconductorsOptical PropertiesMolecular Beam EpitaxyMaterials SciencePhysicsNanotechnologyMos2 Thin FilmsUltrathin Mos2 FilmsLayered MaterialSingle LayerTransition Metal ChalcogenidesNatural SciencesSurface ScienceApplied PhysicsMultilayer HeterostructuresThin FilmsLayer Thicknesses
We investigated the optical properties of ultrathin MoS2 films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS2 film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS2 thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d2ε(E)/dE2), we determined several critical point energies. The d2ε(E)/dE2 spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.
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