Photoemission Studies of the Electronic Structure of EuO, EuS, EuSe, And GdS

Abstract

Photoemission measurements on the magnetic semiconductors EuO, EuS, and EuSe show emission from $4{f}^{7}$ states which lie in the gap above the top of \ensuremath{\sim}2- to 3-eV-wide valence bands. These measurements, together with optical data, indicate semiconductor energy gaps of 4.3, 3.1, and 3.1 eV for EuO, EuS, and EuSe (all \ifmmode\pm\else\textpm\fi{}0.4 eV). Metallic GdS shows a narrow occupied conduction band at the Fermi level, in addition to a filled valence band and $4{f}^{7}$ state.