Third-generation photovoltaics

TLDR

Third‑generation photovoltaics aim for high efficiency using thin‑film, second‑generation deposition, employ abundant, non‑toxic materials, and differ from energy‑intensive first‑generation single‑crystal devices. The study aims to reduce cost per Watt peak by achieving high‑efficiency third‑generation PVs with only a modest increase in areal costs. The approach uses thin‑film deposition methods that add only a small areal cost increase to lower the cost per Watt peak. These third‑generation technologies are compatible with large‑scale PV implementation.

Abstract

Third-generation approaches to photovoltaics (PVs) aim to achieve high-efficiency devices but still use thin-film, second-generation deposition methods. The concept is to do this with only a small increase in areal costs and hence reduce the cost per Watt peak1 (this metric is the most widely used in the PV industry). Also, in common with Si-based, second-generation, thin-film technologies, these will use materials that are both nontoxic and not limited in abundance. Thus, these third-generation technologies will be compatible with large-scale implementation of PVs. The approach differs from first-generation fabrication of high-quality, low-defect, single-crystal PV devices that have high efficiencies approaching the limiting efficiencies for single-bandgap devices but use energy- and time-intensive techniques.