Intense field effects on hydrogen impurities in quantum dots

Abstract

Calculations of the binding energy of an on-center donor hydrogenic impurity in a quasizero-dimensional quantum-well system [quantum dot (QD)] placed in an intense, high-frequency laser field are presented. A nonperturbative theory and a variational approach are used as the framework for this calculation. The effect of the intense laser field is to “dress” the impurity potential making it dependent upon the laser field amplitude. A rapid decrease of the binding energy, for different values of the QD radius and for both infinite and finite potential barriers, with increasing field intensity is predicted. An application is made for a spherical QD made of GaAs/Ga1−xAlxAs heterostructures.