Advances in organic field-effect transistors

Abstract

Since organic field-effect transistors (OFETs) were first described in 1987, they have undergone great progress, especially in the last several years. Nowadays, the performance of OFETs is similar to that of amorphous silicon (a-Si : H) devices and they have become one of the most important components of organic electronics. This feature article introduces briefly the operating principles, fabrication techniques of the transistors, and in particular highlights the recent progress, not only including materials and fabrication techniques, but also involving organic single crystal FETs and organic light-emitting FETs, which have been reported recently. Finally, the prospects and problems of OFETs that exist are discussed.