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THE DYNAMICS OF DEUTERIUM ADSORPTION ON Pt{100} AND THE ROLE OF ADSORBATE-INDUCED DEFECTS

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1994

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Abstract

The dissociative initial sticking probability, s 0 , for deuterium on Pt{100}-hex has been measured as a function of beam kinetic energy, E k , and substrate temperature, T S . At T S =150 K, s was found to increase with increasing E k consistent with direct activated adsorption; the increase is approximately linear. At E k =0.063 eV , s 0 is independent of substrate temperature (s 0 ≈0.07) over the range 150 to 1000 K, also consistent with a direct adsorption process. We present evidence for an increase of s 0 due to adsorbate-induced defects. These defects survive annealing to 500 K but do not survive annealing to 1030 K. We have also measured s for D 2 on the (1×1) bulk truncated surface, and find it to be similar to that for the hex-reconstructed phase.