Design of a low‐power‐consumption a‐IGZO TFT‐based V<i>com</i> driver circuit with long‐term reliability

Abstract

Abstract— An amorphous‐InGaZnO (a‐IGZO) thin‐film transistor (TFT)‐based V com driver circuit that has long‐term reliability and can be integrated with the pixel array on a panel has been designed. Owing to the V com inversion, the power consumed by the proposed driving scheme is 40% less than that consumed by the conventional line‐inversion method. The high mobility (&gt;10 cm 2 /V‐sec) of the a‐IGZO TFTs allows the integration of devices with small channel widths (&lt;750 μm) and thus keeps the overall device size small, which is important for displays with narrow bezels. The lifetime of the V com driver is improved by AC driving (by clocking the n ‐th and ( n + 1)‐th frame with 20 and 0 V, respectively) of the buffer TFTs.