Distribution of polarized-cathodoluminescence around the structural defects in ZnSe/GaAs(001) studied by transmission electron microscopy

Abstract

The spatial distribution of the polarized cathodoluminescence (CL) emissions from thin ZnSe films grown by metalorganic vapor phase epitaxy method on GaAs(001) has been examined by a low-temperature polarized CL measurement system combined with a transmission electron microscope. It is found that the Y0 and Y1 emissions come from the regions near dislocation tangles and near individual dislocations. The polarized CL images of these emissions show changes in intensity distribution when the polarization condition is changed. The observations suggest that the polarization direction of these emissions is parallel to the dislocation line.