Up to 3 <i>μ</i>m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

Abstract

We present 3 μm photoluminescence at room temperature, which is achieved with GaInAs/GaAsSb type-II quantum wells on InP substrate. This long-wavelength emission became feasible by using highly compressive strained Ga0.25In0.75As and GaAs0.4Sb0.6 layers. Furthermore, a comparison between standard superlattice and so called “W” shaped quantum wells revealed that the emission linewidth can be drastically reduced by using the latter design, which is necessary for low threshold laser operation.