Note on the Analysis of DLTS and C²-DLTS

Abstract

The difference in the peak temperatures of DLTS and C 2 -DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C 2 -DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C 2 -DLTS. These phenomena appear in DLTS and C 2 -DLTS measurements on Au-doped Si p + n diodes. It is necessary to use C 2 -DLTS together with DLTS in the study of deep impurities in semiconductors.