Performing Stateful Logic on Memristor Memory

Abstract

This brief proposes a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar. Through analysis and comparison of multiple schemes, achievable circuit condition is demonstrated, and the feasibility of the duplication operation is proved. The proposed circuit structure provides the memory with the function of in situ logic operation and thus can potentially reduce the amount of memory accessing actions and provide a possible solution to the memory wall problem.