Zn_1-xCd_xO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

Abstract

Zn 1- x Cd x O films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The content ratio of Zn 1- x Cd x O films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The wurtzite structure of Zn 1- x Cd x O films was obtained by increasing the Cd content up to x =0.697. The optical-band-gap energy of Zn 1- x Cd x O films was tuned between 1.85 eV and 3.28 eV at room temperature. The photoluminescence emission of hexagonal Zn 1- x Cd x O films up to x = 0.697 was observed at room temperature.