Publication | Open Access
Three-dimensional optical memory with rewriteable and ultrahigh density using the valence-state change of samarium ions
145
Citations
10
References
2002
Year
Optical MaterialsEngineeringEmerging Memory TechnologyLaser ApplicationsOptoelectronic DevicesPhase Change MemoryOptical PropertiesUltrahigh DensityMemory DeviceMemory DevicesOptical SystemsSamarium IonsNanophotonicsMaterials SciencePhotonicsPhysicsElectronic MemoryThree-dimensional Optical MemoryFemtosecond LaserOptical SensorsOptical MemoryApplied PhysicsSemiconductor MemoryOptoelectronics
Photoreduction bits can be spaced 150 nm apart in glass, enabling multilayer structures with hundreds of layers for high‑density data storage. The study demonstrates a 3‑D optical memory in glass that records, reads, and erases 200‑nm diameter photoreduction bits via valence‑state changes of samarium ions, achieving room‑temperature stability and a theoretical capacity of up to 1 Tbit in a 10 mm × 10 mm × 1 mm volume.
We report the recording, readout, and erasure of a three-dimensional optical memory using the valence-state change of samarium ions to represent a bit. A photoreduction bit of 200 nm diam can be recorded with a femtosecond laser and readout clearly by detecting the fluorescence as a signal (excitation at 488 nm, 0.5 mW Ar+ laser). A photoreduction bit that is stable at room temperature can be erased by photo-oxidation with a cw laser (514.5 nm, 10 mW Ar+ laser). Since photoreduction bits can be spaced 150 nm apart in a layer within glass, a multilayer structure with several hundred layers could be used to record data. A memory capacity of as high as 1 Tbit could thus be achieved in a glass piece with dimensions of 10 mm×10 mm×1 mm.
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