Mapping the nonlinear dynamics of a laser diode via its terminal voltage

Abstract

We show that the bifurcations between dynamical states originating in the nonlinear dynamics of an external-cavity semiconductor laser at constant current can be detected by its terminal voltage V. We experimentally vary the intensity fed back into the gain medium by the external cavity and show that the dc component V(dc) of V tracks the optical intensity-based bifurcation diagram. It is shown using computational results based upon the Lang-Kobayashi model that whereas optical intensity accesses the dynamical-state variable |E|, V is related to population-inversion carrier density N. The change in feedback strength affects N and thereby the quasi-Fermi energy level difference at the p-i-n junction band-gap of the gain medium. The change in the quasi-Fermi energy-level thereby changes the terminal voltage V. Thus V is shown to provide information on the change in the dynamical-state variable N, which complements the more conventionally probed optical intensity.