Chemical vapour deposition of copper or silver from the precursors [M(hfac)(CNMe)][M = Cu, Ag; hfac = CF₃C(O)CHC(O)CF₃]

Abstract

The new complexes [M(hfac)(CNMe)], where hfac = CF3C(O)CHC(O)CF3 and M = Cu or Ag, are good precursors for the chemical vapour deposition (CVD) of thin films of copper or silver. The complex with M = Ag has been characterized by an X-ray structure determination to be monomeric with distorted trigonal planar coordination at silver(I). Thermal CVD of silver can be carried out at 320 °C to give silver films with carbon and oxygen impurities. Pure silver films can be obtained at 250 °C by thermal CVD in the presence of hydrogen.