Electronic structure of an AlN film produced by ion implantation, studied by electron spectroscopy

Abstract

N+ ion implantation in a pure Al (111) monocrystal triggers a crystalline and stoichiometric thin AlN film. A complete description of the electronic states of the film is obtained by combining different spectroscopies carried out in situ. The density of electronic states in the valence band is given by x ray and UV photoemission spectroscopy; excitation of a core level (Al2p) by electrons provides information on the density of unoccupied states in the conduction band. Low-electron energy-loss spectroscopy allows one to study transitions between occupied and unoccupied states, as well as localized levels in the band gap, due to the presence of structural defects.