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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1−xAs device
81
Citations
14
References
2001
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringLaser ScienceGaas/alxga1−xas DeviceLaser ApplicationsLaser MaterialHigh-power LasersSemiconductorsRate EquationsSemiconductor LasersSelf-consistent SolutionsCompound SemiconductorOptical PumpingPhotonicsQuantum SciencePhysicsIntersubband Rate EquationsCarrier Transition RatesApplied PhysicsQuantum Photonic DeviceOptoelectronicsElectron Densities
The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently. These calculations are repeated for a range of temperatures from 20 to 300 K. The lifetime of the upper laser level found by this self-consistent method is then used to calculate the gain for this range of temperatures. At a temperature of 77 K, the gain of the laser is found to be 34 cm−1/(kA/cm−2), when only electron–longitudinal-optical phonon transitions are considered in the calculation. The calculated gain decreases to 19.6 cm−1/(kA/cm−2) when electron–electron transition rates are included, thus showing their importance in physical models of these devices. Further analysis shows that thermionic emission could be occurring in real devices.
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