Journal of Applied Physics · 2001 · 83 citations · 14 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureLaser PhysicsOptical Properties Of SemiconductorsQuantum OptoelectronicsSemiconductor LasersSemiconductor PhysicsGainMid-infrared MaterialsOptical Gain In SemiconductorsOptical TransitionsPhysical ModelsQuantum Cascade LasersSemiconductor Laser Rate EquationsThermionic Emission
The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently. These calculations are repeated for a range of temperatures from 20 to 300 K. The lifetime of the upper laser level found by this self-consistent method is then used to calculate the gain for this range of temperatures. At a temperature of 77 K, the gain of the laser is found to be 34 cm−1/(kA/cm−2), when only electron–longitudinal-optical phonon transitions are considered in the calculation. The calculated gain decreases to 19.6 cm−1/(kA/cm−2) when electron–electron transition rates are included, thus showing their importance in physical models of these devices. Further analysis shows that thermionic emission could be occurring in real devices.
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Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations
Vertical transition quantum cascade laser with Bragg confined excited state
Jérôme Faist, Federico Capasso, Carlo Sirtori et al. · Applied Physics Letters · 1995 · 195 citations