Tuning of the electronic properties of self-assembled InAs∕InP(001) quantum dots using grown-in defect mediated intermixing

Abstract

This paper examines the influence of rapid thermal annealing on the photoluminescence spectra of self-assembled InAs∕InP(001) quantum dots capped with 760nm InP deposited at a reduced temperature. The capping layer contained a large concentration of point defects that can promote interdiffusion upon annealing. The onset temperature for measurable blueshift in the emission spectra was found to be ∼600°C whereas shifts of 270meV were obtained after annealing at 750°C for 300s. Gradual etching of the InP capping layer enabled to progressively quench energy shifts upon annealing, a promising result for spatially selective emission tuning.