Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells

Abstract

We report the strong screening effect of photo-generated carriers on piezoelectric field induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrödinger's and Poisson's equations in order to interpret the experimental data. Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.