Publication | Closed Access
A polyacetylene:aluminum photodiode
60
Citations
11
References
1981
Year
Oxygen ContaminationEngineeringOptoelectronic DevicesIntegrated CircuitsChemistryPhotoelectric SensorElectronic DevicesPhotodetectorsPhotopolymer NetworkCompound SemiconductorMaterials SciencePhotonicsElectrical EngineeringPhotochemistryOptoelectronic MaterialsPhotoelectric MeasurementQuantum EfficiencyAluminum PhotodiodeAl Schottky PhotodiodeApplied PhysicsOptoelectronics
The fabrication of a 1-cm2 (CH)x:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn≳2.8 eV) is reported. Device characteristics are presented. The effect of oxygen contamination is also discussed.
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