Role of <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> rapid isothermal processing in the solid phase epitaxial growth of II-A fluoride films on (100) and (111) InP

Abstract

Rapid isothermal processing based on incoherent sources of light is emerging as a reduced thermal budget processing technique for the fabrication of next generation of semiconductor devices and circuits. In this letter, we show that integration of the rapid isothermal processing unit and the ultrahigh vacuum deposition system provides an in situ rapid isothermal processing capability for the solid phase epitaxial growth of SrF2 and BaF2 films on (100) and (111)InP. We also show that neither as-deposited nor ex situ annealed films show solid phase epitaxial growth.