Publication | Closed Access
Optical properties of bulk Al<i>x</i>Ga1−<i>x</i>As
21
Citations
16
References
1993
Year
Materials SciencePhotonicsElectrical EngineeringOptical MaterialsEngineeringSemiempirical ModelPhysicsAluminium NitrideOptical PropertiesWide-bandgap SemiconductorApplied PhysicsCondensed Matter PhysicsPhoton EnergiesCategoryiii-v SemiconductorOptoelectronicsSpectroscopic PropertyCompound SemiconductorIi-vi Semiconductor
An analytical, semiempirical model is presented for the optical properties of AlxGa1−xAs for photon energies from 1.2 to 6 eV. For GaAs, the discrepancy between the calculated refractive index and the experimental data is about 0.003 at 1.8 eV, and is about 0.012 at 1.2 eV. For all the other AlxGa1−xAs alloys, the calculated optical properties are in satisfactory agreement with the experimental data for photon energies from 1.2 to 6 eV.
| Year | Citations | |
|---|---|---|
Page 1
Page 1