Growth of diamond thin films by electron assisted chemical vapor deposition

Abstract

Diamond thin films have been formed by the newly proposed electron assisted chemical vapor deposition on SiC with a high growth rate (3∼5 μm/h). The obtained films have good crystallinity in the sense of electron and x-ray diffraction. Vicker’s hardness of the films is about 9000 kg/mm2. The influence of the electron bombardment on the initial island density on the substrate surface and on the decomposition of the reactant gases (CH4 and H2) is discussed relating to the growth process of the films.