Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 µ m Separate Confinement Heterostructure Lasers

Abstract

We report the high-power and reliable operation of InGaAsP/InGaP/AlGaAs 0.8 µ m separate confinement heterostructure single-quantum-well laser diodes. High output power of 1.8 W is achieved from an anti-reflection- and high-reflection-coated device with stripe width of 50 µ m and cavity length of 1.25 mm. This device has high characteristic temperature of 164 K and low threshold current density of 300 A/cm 2 . No catastrophic failure in the laser with 0.75 mm cavity length is observed during 1000 h aging test at 50° C under an automatic power control of 500 mW. The effect of cavity length on laser characteristics is also discussed.