Si-rich/SiO 2 nanostructured multilayers by reactive magnetron sputtering

Abstract

Silicon-rich (SR)/SiO2 multilayered systems were produced by reactive magnetron sputtering, through an approach based on the ability of hydrogen, when alternatively mixed to the argon of the plasma, to reduce the oxygen originated from the SiO2 target. Optimum values of both hydrogen partial pressure (45 mTorr) and deposition temperature (500 °C) have led to the highest incorporation of Si in the SR layer which crystallizes after annealing. The SR/SiO2 superlattices grown with such conditions showed that the size of the Si nanocrystals is limited by the thickness of the SR layer. Considering the difference observed between the photoluminescence peak position and the predicted band gap for Si nanocrystals, the results suggest that we deal with a quantum-size confinement assisted by a Si–O vibration located at the interface.