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Large area YBa/sub 2/Cu/sub 3/O/sub 7/ films for high power microwave applications
30
Citations
16
References
1995
Year
Materials EngineeringMaterials ScienceElectrical EngineeringLarge AreaEngineeringSpecific ResistanceSurface ResistanceApplied PhysicsSuperconductivityHigh PowerThin Film Process TechnologyThin FilmsElectronic PackagingMicroelectronicsMicrowave EngineeringMicrowave Surface ResistanceThin Film Processing
We have developed large area YBa/sub 2/Cu/sub 3/O/sub 7/ films (/spl ges/2 inch diameter) which have low microwave surface resistance at high microwave power levels. The films are produced by off-axis sputtering using a noncontact direct radiant heating technique. Thickness and composition are uniform to within /spl plusmn/3% and T/sub c/ is uniform to within /spl plusmn/1 K across 3 inch diameter wafers. The microwave surface resistance of these films has been measured over a wide range of temperature (20 K to 80 K) and microwave power. At 20 K, the surface resistance remains below 100 /spl mu//spl Omega/ (at 10 GHz) for microwave surface current densities up to 4.6/spl times/10/sup 6/ A/cm/sup 2/. At 70 K, the surface resistance remains below 350 /spl mu//spl Omega/ (@ 10 GHz) for microwave curent densities up to 1.3/spl times/10/sup 6/ A/cm/sup 2/. High power microwave transmission lines (14 /spl mu/m produced with these films are capable of transmitting microwave power up to +25 dBm (>2.3/spl times/10/sup 6/ A/cm/sup 2/ average current density) at 70 K.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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