Publication | Closed Access
Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
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Citations
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References
2010
Year
Materials ScienceCrystalline QualityEpitaxial GrowthEngineeringCrystal Growth TechnologyBuffer LayerApplied PhysicsIn0.82ga0.18as GrownMolecular Beam EpitaxyMicroelectronicsChemical Vapor DepositionThin Film Processing
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